FCU4300N80Z
Manufacturer:
On Semiconductor
Mfr.Part #:
FCU4300N80Z
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 27.8 W 800 V Continuous Drain Current (ID):1.6 A 8.8 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 4.3 Ω |
| Packaging | Tube |
| RoHS | Compliant |
| Weight | 343.08 mg |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 27.8 W |
| Power Dissipation | 27.8 W |
| Number of Channels | 1 |
| Input capacitance | 355 pF |
| Continuous Drain Current (ID) | 1.6 A |
| Rds On Max | 4.3 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 21 ns |
| Element Configuration | Single |
| Rise Time | 6.5 ns |
| Gate Charge | 8.8 nC |
| Drain to Source Resistance | 4.3 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 4.5 V |
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